, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. n channel enhancement mode avalanche-rated buz 30a telephone: (973) 376-2922 pin1 pin 2 d pin 3 type buz 30a yds 200v id 21 a ^ds(on) 0.130 package to-220 ab maximum ratings parameter continuous drain current tc = 26 c pulsed drain current tc = 25 c avalanche currentjimited by 7jmax avalanche energy, periodic limited by tjmax avalanche energy, single pulse /d = 21 a, i/dd = 50 v, rgs = 25 q l = 1.53mh, 7] = 25c gate source voltage power dissipation tc = 25 c operating temperature storage temperature thermal resistance, chip case thermal resistance, chip to ambient din humidity category, din 40 040 iec climatic category, din iec 68-1 symbol id /dpuls /ar ar has vgs plot t\stg ^thjc ^thja values 21 84 21 12 450 20 125 -55... + 150 -55... + 150 <1 75 e 55/150/56 unit a mj v w c k/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics, at 7] = 25c, unless otherwise specified buz 30a parameter symbol values min. typ. max. unit static characteristics drain- source breakdown voltage vgs = 0 v, /d = 0.25 ma, 7] = 25 c gate threshold voltage vgs=^ds, /d = 1 rna zero gate voltage drain current vds = 200 v, vgs = 0 v, 7] = 25 c vds = 200 v, vgq = o v, 7] = 125 c gate-source leakage current vgs = 20 v, vds = 0 v drain-source on-resistance vgs = 10v,/d = 13.5a ^(br)dss ^gs(th) /dss igss ^ds(on) 200 2.1 - - - - - 3 0.1 10 10 0.1 - 4 1 100 100 0.13 v ma na q
buz 30a electrical characteristics, at 71 = 25c, unless otherwise specified parameter symbol values min. typ. max. unit dynamic characteristics transconductance vdss 2 * /d * rds(on)max, /d = 13.5 a input capacitance vgs = 0 v, vds = 25 v, f= 1 mhz output capacitance vgs = 0 v, vds = 25 v, f = 1 mhz reverse transfer capacitance vgs = 0 v, vds = 25 v, f= 1 mhz turn-on delay time vdd = 30 v, vgs = 10 v, /d = 3 a rgs = 50 a rise time vdd = 30v, vgs = 10v, /d = 3a rgs = 50 a turn-off delay time vdd = 30v, vgs=10v,/d = 3a rgs = 50 q fall time vdd = 30 v, vgs = 10v, /d = 3 a rgs = 50 n flfs qss cos5 qss fd(on) tr ^^ ff 6 15 1400 280 130 30 70 250 90 1900 400 200 45 110 320 120 s pf ns
buz 30a electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit reverse diode inverse diode continuous forward current 7c = 25 c inverse diode direct current, pulsed 7c = 25 c inverse diode forward voltage vgs = 0 v, /f = 42 a reverse recovery time vr = 100 v, /f=/s, d/f/df = 100 a/us reverse recovery charge v/r = 100 v, /f=/si d/f/df = 100 a/us /s ibm vsd *rr qrr - - - - - - - 1.2 180 1.2 21 84 1.6 - - a v ns uc
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